THE N⁺-IPOS SCHEME AND ITS APPLICATIONS TO IC'S.ARITA Y; KATO K; SUDO T et al.1977; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 6; PP. 756-757; BIBL. 8 REF.Article

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A NEW DIELECTRIC ISOLATION METHOD USING POROUS SILICONIMAI K.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 2; PP. 159-164; BIBL. 11 REF.Article

CDI AND COMPETITIVE TECHNOLOGIES.BRUCHEZ J.1974; MICROELECTRONICS; G.B.; DA. 1974; VOL. 5; NO 4; PP. 45-54Article

OXIDE ISOLATED ISL TECHNOLOGIESLOHSTROH J; CROMMENACKER JDPVD; LINSSEN AJ et al.1981; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1981; VOL. 2; NO 2; PP. 30-31; BIBL. 5 REF.Article

LE 1ER MICROPROCESSEUR CDI BIPOLAIRE 16 BITS SUR UNE PUCE.LILEN H.1977; ELECTRON. APPL. INDUSTR.; FR.; DA. 1977; NO 234; PP. 49-51Article

DIELECTRIC ISOLATION TECHNIQUES FOR INTEGRATED CIRCUITS.BOSNELL JR.1976; MICROELECTRON. AND RELIABIL.; G.B.; DA. 1976; VOL. 15; NO 2; PP. 113-122; BIBL. 58 REF.Article

A NEW ISOLATION TECHNIQUE FOR SOS/LSI'S-LOCAL BURIED OXIDE ISOLATION OF SOS (LOBOS).SAKAI Y; HORI R; DOTA K et al.1977; JAP. J. APPL. PHYS.; JAP.; DA. 1977; VOL. 16; SUPPL. 1; PP. 551-555; BIBL. 2 REF.; (CONF. SOLID STATE DEVICES. 8. PROC.; TOKYO; 1976)Conference Paper

U-GROOVE ISOLATION TECHNOLOGYHAYASAKA A; TAMAKI Y.1982; JEE, J. ELECTRON. ENG.; ISSN 0385-4507; JPN; DA. 1982; VOL. 19; NO 188; PP. 36-39Article

OXIDE-ISOLATED INTEGRATED SCHOTTKY LOGICHEWLETT FW JR.1980; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 5; PP. 800-802; BIBL. 5 REF.Article

AN INVESTIGATION OF THE APPLICATION OF POROUS SILICON LAYERS TO THE DIELECTRIC ISOLATION OF INTEGRATED CIRCUITSTENG TC.1979; J. ELECTROCHEM. SOC.; USA; DA. 1979; VOL. 126; NO 5; PP. 870-874; BIBL. 4 REF.Article

PROGRESS IN BIPOLAR DEVICES.NISHIDA S.1973; JAP. ELECTRON. ENGNG; JAP.; DA. 1973; NO 77; PP. 72-73Article

EVOLUTION DE L'ISOLEMENT INTERCOMPOSANTS AVEC LES TECHNOLOGIES BIPOLAIRESLILEN H.1973; ELECTRON. MICROELECTRON. INDUSTR.; FR.; DA. 1973; NO 175; PP. 63-67Serial Issue

A 16K-HIT STATIC IIL RAM WITH 25-NS ACCESS TIMEINABE Y; HAYASHI T; KAWARADA K et al.1982; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1982; VOL. 17; NO 2; PP. 325-330; BIBL. 5 REF.Article

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OXIL, A VERSATILE BIPOLAR VLSI TECHNOLOGYAGRAZ GUEERENA J; PANOUSIS PT; MORRIS BL et al.1980; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 4; PP. 462-466; BIBL. 11 REF.Article

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